Khakimjon Saidov1,2,3, Zainul Aabdin2,4, Hongwei Yan1,2

  • 1Department of Physics, National University of Singapore, Singapore, 117551, Singapore.

概括

控制晶体 (c-Ge) 湿蚀是先进半导体设备的关键. 将盐酸添加到过氧化蚀刻剂可以实现可调节的,取决于方向的蚀刻,用于精确的纳米电子制造.