铁电记忆器的随机性和过程引起的损伤之间的物理相关性

Ryun-Han Koo1, Seungwhan Kim1, Jiseong Im1

  • 1Department of Electrical and Computer Engineering and Inter- University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea.

Nano convergence
|August 29, 2025
PubMed
概括

喷射等离子电力通过改变陷密度影响铁电道结 (FTJ) 的性能. 优化等离子体条件可以最大限度地降低噪音,提高记忆和神经形态设备的可靠性.

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