通过Mo牺牲器进行晶片级石墨烯的无转移增长
Wenze Wei1,2, Yiming Luo3, Kaixuan Zhou2
1College of Energy, Soochow Institute for Energy and Materials Innovations, SUDA-BGI Collaborative Innovation Center, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou 215006, China. sunjy86@suda.edu.cn.
研究人员开发了一种在二氧化/基板上无转移增长石墨烯的简单方法. 作为牺牲层的可以轻松移除,消除了对均石墨烯晶片的苛刻化学蚀刻.
科学领域:
- 材料科学
- 纳米技术
- 表面化学
背景情况:
- 石墨烯合成通常需要转移过程,通常涉及苛刻的化学蚀刻.
- 在石墨烯生长中使用的金属催化剂可能会留下残留物,影响设备的性能.
研究的目的:
- 在二氧化/基板上培养直接无转移的石墨烯方法.
- 在石墨烯制造过程中不需要化学蚀刻金属催化剂.
- 为了实现统一,高质量的石墨烯薄膜与最小的污染.
主要方法:
- 使用 (Mo) 作为无转移石墨烯生长的牺牲层.
- 石墨烯直接生长在SiO2/Si基板上.
- 通过简单的气吹去除了Mo的牺牲层.
主要成果:
- 在2英寸SiO2/Si晶片上成功实现了无转移的石墨烯生长.
- 通过空气吹风来轻易地去除Mo的牺牲层.
- 由此产生的石墨烯表现出极好的电均性.
- 在石墨烯表面观察到最小的金属残留物.
结论:
- 开发的方法为无转移的石墨烯合成提供了简单有效的途径.
- 消除化学蚀刻和金属催化剂残留物提高了电子应用中的石墨烯质量.
- 这种技术对可扩展,具有成本效益的石墨烯晶圆生产具有前景.
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