在低真空SEM中对二次电子的超变压探测器的特性
Yuanzhao Yao1, Ryosuke Sonoda1, Yasunari Sohda1
1Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan.
Microscopy (Oxford, England)
|September 4, 2025
概括
在低真空扫描电子显微镜 (SEM) 中的超变压探测器 (UVD) 提供了独特的信号特性. 通过调整压力,可以调整UVD信号以主要检测二次电子或低能反散电子.
科学领域:
- 材料科学
- 显微镜技术
- 表面科学
背景情况:
- 低真空扫描电子显微镜 (SEM) 可以在没有导电涂层的情况下对绝缘样品进行成像.
- 在传统的非导电材料中,充电效应是一个挑战.
- 超变压探测器 (UVD) 是为了在低真空中检测二次电子而开发的.
研究的目的:
- 在低真空SEM中描述UVD的信号特征.
- 将UVD信号与传统的Everhart-Thornley (E-T) 探测器进行比较.
- 了解真空压力对UVD信号组成的影响.
主要方法:
- 使用不钢 (SUS) 球体进行信号表征.
- 在不同低真空条件下进行实验和模拟 (几Pa至30Pa).
- 将UVD信号配置与ET探测器的信号配置进行比较.
主要成果:
- 紫外线信号呈现出明显的双圆峰形状,与ET探测器不同.
- 在较高的真空 (几Pa) 中,SE主导UVD信号,类似于ET探测器输出.
- 在较低的真空 (30 Pa) 中,低能反散电子 (BSEs) 成为UVD信号的主要贡献者.
结论:
- 紫外线信号的组成取决于压力.
- 调节室压力可以控制UVD图像是否强调SE或低能BSE信号.
- 这为不同的样本类型和所需信息提供了低真空SEM成像的灵活性.
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