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Updated: Sep 9, 2025

Fabrication of Ti3C2 MXene Microelectrode Arrays for In Vivo Neural Recording
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过渡金属对MXenes的插入:对电子和伪电容性质的影响

Shianlin Wee1, Xiliang Lian2,3, Dario Gomez Vazquez1

  • 1Electrochemical Energy Systems Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland.

ACS nano
|September 5, 2025
PubMed
概括

将过渡金属插入到Ti3C2Tx MXenes中改变了它们的电子特性,增加了电阻. 选择的特定金属影响氧化还原活性和Ti参与,指导未来的二维材料设计.

关键词:
二维材料其他类型一开始的分子动力学充电储存机制密度函数理论在位X射线吸收光谱伪容量过渡金属间隔

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