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Updated: Sep 8, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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通过门绝缘体堆工程来提高InGaZnO薄膜晶体管的电流和可靠性

Narae Han1,2, Youngchae Roh1,3,4, Ha-Jun Sung1,2

  • 1Department of Material Sciences and Engineering, Seoul National University, Seoul 08826, Republic of Korea.

ACS applied materials & interfaces
|September 5, 2025
PubMed
概括

设计的多层门绝缘器通过提高电流和偏移稳定性来增强无形InGaZnO薄膜晶体管 (a-IGZO TFT). 这种新的方法优化了介电堆用于先进的集成电路和神经形态应用.

关键词:
无形的IGZO (a-IGZO)偏向应力稳定性门介电堆接口工程突触装置

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