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Updated: Sep 8, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

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预计用于先进纳米技术的ESD保护的超越性能和放电能力的P型埋层DTSCR

Zhengwei Zhang1, Shupeng Chen2, Hongxia Liu2

  • 1Xidian University School of Electronic Engineering, No. 2 Taibai South Road, Electronic City Street, Xi'an, 710071, CHINA.

Nanotechnology
|September 5, 2025
PubMed
概括

一个新的P型埋层二极管触发控制校正器 (PBL-DTSCR) 提供了卓越的静电放电 (ESD) 保护. 与传统设计相比,这种新型装置显著提高了放电效率,降低了超标电压,并降低了泄漏电流.

关键词:
美国其他用二极管触发的超越电压

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Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators11:44

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