过渡域边界驱动超快磁化反转
Martin Hennecke1, Daniel Schick2, Themistoklis P H Sidiropoulos3
1Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany. hennecke@mbi-berlin.de.
Nature communications
|September 5, 2025
概括
超快的全光学螺旋独立磁化切换 (AO-HIS) 不仅是局部的,也是依赖于深度的过程. 磁层中的移动边界决定了切换速度和最终状态.
科学领域:
- 凝聚物质物理学
- 材料科学
- 超快的现象
背景情况:
- 全光螺旋独立磁化切换 (AO-HIS) 是技术应用的一个有前途的超快现象.
- 目前的理解将AO-HIS归因于局部的热驱动的角动量转移.
- 这种局部形象一直是实验和理论研究的焦点.
研究的目的:
- 挑战AO-HIS纯粹的本地模式.
- 调查AO-HIS作为薄磁内的空间不均的过程.
- 了解超快切换中短暂的纳米级同质性的作用.
主要方法:
- 研究了一种9.4纳米薄的Gd25Co75合金.
- 使用探测磁化切换动态的技术.
- 分析了沿着薄膜深度的切换过程的空间不均性.
主要成果:
- 证明了AO-HIS在磁层深处是一个空间不均的过程.
- 通过移动边界分离的两种不同的磁化方向.
- 证明这种过渡边界的动态决定了最终的磁化状态和切换速度.
结论:
- 对于AO-HIS的局部图像是不够的;深度依赖的不统一性至关重要.
- 过渡的纳米级不均质对超快切换现象有显著影响.
- 了解这些不均性为设计信息存储和传输设备的材料和激发场景开辟了新的途径.
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