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变磁带分为10纳米的 CrSb 薄膜

Sandra Santhosh1, Paul Corbae2,3, Wilson J Yánez-Parreño2,3

  • 1Dept. of Physics, Pennsylvania State University, University Park, PA, 16802, USA.

Advanced materials (Deerfield Beach, Fla.)
|September 6, 2025
PubMed
概括

在抗氧化物 (CrSb) 薄膜中的反磁性表现出动量依赖的带分裂. 这一关键的变磁性质持续到10纳米厚度,显示出对旋磁应用的潜力.

关键词:
在ARPES美国改变磁铁抗铁磁体中子反射率

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