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Updated: Jan 18, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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在单层MoS2晶体管上顶端绝缘体的原子层沉积的前体工程

Alexander B Shearer1, Jung-Soo Ko2, Anh Tuan Hoang2,3

  • 1Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.

ACS nano
|September 8, 2025
PubMed
概括

选择正确的原子层沉积 (ALD) 前体是2D半导体如二硫化物 (MoS) 上高质量的门绝缘体的关键. 较长的配体可以改善绝缘体核化,从而提高晶体管的性能.

关键词:
两维材料是二维材料.原子层沉积的原子层沉积.它的物理吸收.工程的前体工程的前体.晶体管是一个晶体管.过渡金属二甲基二甲基化物

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