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在垂直延长的排水双门中,辐射诱导的单一事件效应 Si 0.5 Ge 0.5 来源 TFET

Roma Rani¹, Sangeeta Singh²

¹Department of Electronics and Communication Engineering, National Institute of Technology Patna, Patna, Bihar, India. romar.ph21.ec@nitp.ac.in.

Journal of molecular modeling

|September 9, 2025

概括

这项研究表明,SiGe VTFET具有对重离子的辐射耐受性. 由于强大的设计,该设备对单一事件效应 (SEE) 的敏感性最小.

科学领域:

半导体物理半导体物理
材料科学材料科学材料科学

背景情况:

研究- (SiGe) 源垂直道场效应晶体管 (VTFET) 的辐射耐受性.
检查了重离子诱导的单一事件效应 (SEEs) 在半导体设备中.
专注于高能离子对各种线性能量转移 (LET) 值和离子击中位置的VTFET性能的影响.

研究的目的:

评估SiGe VTFET在重离子轰炸下对辐射的耐受性.
了解设备对不同 LET 值和冲击点的单一事件效应 (SEE) 的反应.
确定VTFET内部易受辐射引起扰乱的脆弱区域.

主要方法:

使用Silvaco TCAD框架与冲击电离模型建模的设备响应.
评估了一系列线性能量转移 (LET) 值和离子击中位置.
量化关键指标,如短暂的排水电流,电荷密度,总收集电荷和双极增益,以确定灵敏度.

主要成果:

SiGe VTFET在LET = 10 MeV·cm2/mg时显示出最大排水电流为277μA/μm,超过了ON状态电流.
表示对辐射引起的干扰的最小易感性,突出显示器件的内在强度.
漂移扩散被确定为占主导地位的电荷收集机制,而道区域最容易受到离子冲击的影响.

结论:

SiGe VTFET对重离子诱导的SEE具有显著的辐射耐受性.
该设备的设计有助于其强度,为辐射硬化组件提供了洞察力.
了解电荷收集机制对于优化未来半导体设计中的辐射弹性至关重要.

关键词:

双极收益是因为双极收益.收到的收费是收到的收费.让我们来看看它.单一事件的影响.在VTFET中,VTFET是VTFET.

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