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高剂量辐射诱导早期和暂时的ATM依赖性炎症反应在人类主要内皮细胞

Clément Rouichi, Elizabeth Chartier-Garcia, Jean-Luc Ravanat

Radiation research

|September 12, 2025

概括

高剂量的电离辐射会在人体内皮细胞中引发早期炎症,先于DNA损伤反应. 这种反应取决于ATM活动,可能会改变被辐射的细胞微环境.

科学领域:

细胞生物学细胞生物学
免疫学免疫学免疫学
辐射生物学辐射生物学

背景情况:

炎症是对细胞损伤的关键免疫反应,例如电离辐射.
人体细胞中辐射诱导炎症的机制,特别是诱导细胞死亡的剂量,尚未完全理解.
在DNA损伤反应和炎症途径之间的相互作用对于辐射后的细胞命运至关重要.

研究的目的:

为了研究在暴露于电离辐射后,人类初级细胞的早期炎症反应.
为了确定辐射诱导炎症的剂量依赖性和细胞类型特异性.
探索ATM活动在辐射诱导炎症基因表达中的作用.

主要方法:

人体血管内皮细胞,微血管细胞,血液单核细胞和纤维细胞暴露于电离辐射 (2-10 Gy).
对炎症和DNA损伤反应因子的基因转录分析,暴露后长达24小时.
评估细胞因子的产生和粘附分子的表达.
调查ATM活动的参与.

主要成果:

在10 Gy时,在DNA损伤反应基因激活之前,在内皮细胞中观察到炎症基因转录的短暂增加.
内皮细胞的这种早期炎症反应取决于ATM活动.
在血液单核细胞或纤维细胞中没有观察到类似的早期炎症反应.
在被辐射的内皮细胞中,观察到细胞因子的增加和粘附分子的表达.

结论:

电离辐射在高剂量时可以诱导人体内皮细胞的早期,ATM依赖的炎症反应.
这种炎症反应可能会在DNA损伤反应之前发生,并可能影响免疫微环境.
观察到的反应是特定于细胞类型的,突出显示了内皮细胞与其他细胞类型之间的独特细胞机制.

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