相关实验视频

Updated: Jan 18, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.0K

固体碳纳米圈的调节性质通过与异质离子的离子植入

Joyce B Matsoso1, Kamalakannan Ranganathan2, Daniel Wamwangi2,3

  • 1Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand Johannesburg 2050 South Africa neil.coville@wits.ac.za.

Nanoscale advances
|September 12, 2025
PubMed
概括

用或离子染碳纳米圈会改变它们的结构和磁性. 兴奋剂增强了对磁性敏感性和电导性,表明了先进电子设备的潜力.

更多相关视频

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

9.9K
Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

12.2K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
555