可切换的交换偏差来自于与直角合的反铁磁/铁磁范德瓦尔斯异构结构中的相关域结构
Aditya Kumar1, Sadeed Hameed1, Thibaud Denneulin2
1Institute of Physics, Johannes Gutenberg University Mainz, 55128, Mainz, Germany.
Small (Weinheim an der Bergstrasse, Germany)
|September 12, 2025
概括
工程范德瓦尔斯异构结构显示不对称的磁化反转和交换偏差在铁 telluride (Fe3GeTe2) 由于与硫化 (CrSBr) 的合. 这种效应持续到CrSBr的尼尔温度,为控制磁域结构提供了新的方法.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 范德瓦尔斯 (vdW) 磁性异构结构使自旋相互作用能够在原子层面进行控制.
- 工程非碎的旋转纹理和动态对于旋转电子应用至关重要.
研究的目的:
- 研究Fe3GeTe2 (FGT) 与CrSBr.Br相结合的不对称磁化逆转和交换偏差.
- 在VDW异构结构中揭示界面交换合效应的微观起源.
主要方法:
- 制造FGT/CrSBr vdW的异构结构.
- 不正常的霍尔效应测量以探测磁性质.
- 用于域结构成像的截面离轴电子全息.
主要成果:
- 在FGT中观察到强大的不对称磁化反转和交换偏差.
- 尽管有正交的磁性异构,但已经证明了强大的界面交换合.
- 交换偏差持续到CrSBr的尼尔温度 (~132 K).
- 在FGT中识别了带状域结构,受CrSBr在平面中的反铁磁的影响.
结论:
- 这项研究阐明了直角合的VDW系统中交换偏差的机制.
- 接口交换相互作用可以稳定铁磁体中复杂的3D域结构.
- 这项工作为设计先进的磁性异构结构提供了一条途径.
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