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不寻常的范德瓦尔斯磁电阻在堆叠的铁磁铁Fe₃GeTe₂:原子尖接口的作用

Qian Chen¹, Junwen Sun², Jian Liang¹

¹Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|September 13, 2025

概括

2D范德瓦尔斯磁铁中的原子利接口显著影响磁阻 (MR). 这项研究揭示了接口场,而不是自旋电流,控制Fe3GeTe2膜中的不寻常的异构磁电阻 (UAMR).

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
这就是Spintronics.

背景情况:

接口极大地影响材料性能,特别是在二维范德瓦尔斯 (vdW) 磁铁中.
原子敏接口 (ASI) 是VDW系统中固有的.
在VDW磁层中,ASI场对磁阻 (MR) 的影响仍未得到充分研究.

研究的目的:

在堆叠的铁磁Fe3GeTe2 (FGT) 层中研究MR的角度依赖性.
确定这些系统中不寻常的异型磁电阻 (UAMR) 的潜在机制.
澄清ASI场与UAMR中旋转/电荷电流互转的作用.

主要方法:

在堆叠的FGT薄膜中对角依赖MR的实验研究.
在平面内和垂直于薄膜的MR振荡的分析.
实验结果与理论预测的比较 (自旋霍尔MR和双向量MR理论).

主要成果:

观察到UAMR表现出普遍行为,与纳米厚的二层不同,显示厚度不敏感.
在平面内MR中具有主导的双倍振荡.
高级MR振荡在垂直平面超过1.4%,明显大于平面内MR.
UAMR的行为与旋转霍尔MR理论不一致,但与双向量MR理论一致.

结论:

ASI场,而不是旋转/电荷电流互转换,是像FGT这样的VDW铁磁体中UAMR的主要驱动因素.
提供了直接的实验证据,证明了ASI领域在管理UAMR中的优势.
突出介面效应在理解二维磁性材料中的自旋电子现象方面的重要性.

关键词:

不同类型的磁电阻.原子利的接口是原子利的接口场是一个接口场.两个矢量理论的两个矢量理论.范德瓦尔斯铁磁铁的铁磁铁

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