相关实验视频

Updated: May 6, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

9.1K

在 (101̅0) ZnO等离子体辅助分子束化过程中引入的作用对薄膜的特性

Xiaodan Wang1,2, Hua Zhou3, Regan G Wilks2,4

  • 1Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University, Xiamen 361005, China.

ACS omega
|September 15, 2025
PubMed
概括

这项研究探讨了氧化物 (ZnO) 薄膜的兴奋剂,使用等离子体辅助分子射线表达 (PA-MBE). 的结合改变了膜的形态和化学结构,可能使p型ZnO成为可能.

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films13:05

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

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相关概念视频

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
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