MoS2.

Nikita A Fominykh1,2, Vladimir V Stegailov1,2,3

  • 1Joint Institute for High Temperatures of Russian Academy of Sciences, Izhorskaya St. 13-2, Moscow 125412, Russia.

PubMed
概括

我们在1H-MoS2单层中模拟了激子晶格动态,使用受限制的开Kohn-Sham方法. 这种方法准确地预测了激子扩散速率,这对于光电子应用至关重要.

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