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梯度带隙工程用于提高PbSe光探测器的性能

Ling Lin¹, Jinian Hao¹, Ruisi Gao¹

¹School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, Huazhong University of Science and Technology, 430074, Wuhan, Hubei, China. kanghua_li@hust.edu.cn.

|September 17, 2025

概括

我们开发了用于高性能短波红外 (SWIR) 光探测器的新型化-化梯度合金薄膜. 这一进步显著减少了暗电流,并增强了用于更好的成像应用的光响应.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

使用Ge,InGaAs或HgCdTe的传统短波红外 (SWIR) 光探测器是昂贵而复杂的.
化 (PbSe) 提供了SWIR检测的潜力,但受到高暗电流和缓慢响应的影响.
开发具有成本效益的,与相容的SWIR探测器仍然是一个挑战.

研究的目的:

设计基于PbSe的薄膜,以提高SWIR光探测器的性能.
为了抑制载体重组并增强PbSe薄膜中的载体运输.
为了实现高响应性,低暗电流和在室温下快速响应时间.

主要方法:

使用双源蒸汽输送沉积 (VTD) 制造PbSe-Sb2Se3渐变合金薄膜.
使用Sb2Se3的宽带隙 (1.17 eV) 进行梯度带隙工程.
光探测器性能的表征,包括暗电流,响应度和响应时间.

主要成果:

通过抑制载体重组和增强运输,实现了准同质结结构.
证明了1.97 × 10^-9 A cm^-2.的低暗电流密度.
获得了高响应率 (138.7 mA W^-1) 和超快的响应时间 (11.8 μs上升,18.3 μs下降).
显示出高达90°C的优异热稳定性.

结论:

PbSe-Sb2Se3渐变合金膜为高性能SWIR光探测器提供了一个有前途的途径.
梯度带隙工程有效地减少暗电流并改善光响应.
这种方法可以开发出低成本,室温SWIR探测器,具有出色的稳定性.

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