在基于ONO的闪存电容器中,温度诱导的界面混合和陷调制
Hyunseok Son1, Kyumin Sim1, Hae Chul Hwang2
1Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
Nanotechnology
|September 18, 2025
概括
回火可以提高NAND闪存的可靠性. 最佳温度 (400-450°C) 通过减少氧化物-化物-氧化物堆中的接口陷来增强充电注入和数据保留.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体设备物理 半导体设备物理
背景情况:
- 纳德闪存依赖充电陷介电堆来进行数据存储.
- 接口属性显著影响设备的性能和可靠性.
- 回是一种潜在的界面修改方法.
研究的目的:
- 为了研究回火对NAND闪存电容器的影响.
- 分析热温度对界面SiOxNy层的影响.
- 为了将结构和电气性能变化与设备性能相关联.
主要方法:
- 使用ONO介电堆制造NAND闪存电容器.
- 在300°C至500°C的温度下,形成气体中的回火.
- 电气特性 (C-V,编程速度,保留,耐久性).
- 使用传输电子显微镜 (TEM) 和电子能量损失光谱 (EELS) 的结构分析.
主要成果:
- 在400°C-450°C时火,优化了电气性能.
- 观察到充电注入的改善和界面陷密度的减少.
- 增强的数据保留和耐久性归因于化物中的接口陷被动化和深陷形成.
- 结构分析证实了改善的接口质量和化物陷状态.
结论:
- 回火是提高NAND闪存性能和可靠性的有效方法.
- 优化火温度 (400°C-450°C) 对于最大限度地提高效益至关重要.
- 了解接口SiOxNy层的作用是改善设备的关键.
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