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相关概念视频

MOS Capacitor01:25

MOS Capacitor

1.5K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.5K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

908
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
908
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

823
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
823
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

792
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
792
Non-ohmic Devices00:51

Non-ohmic Devices

1.5K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.5K
Semiconductors01:22

Semiconductors

1.4K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.4K

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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在芯片上的拓边缘状态空洞.

Wenhao Wang1,2, Zhonglei Shen1,2, Yi Ji Tan1,2

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.

Light, science & applications
|September 18, 2025
PubMed
概括
此摘要是机器生成的。

研究人员开发了一种新的拓边缘状态腔,用于增强光子设备中的光限制. 这种强大的芯片平台显著提高了先进光学应用的质量因素和自由光谱范围.

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Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
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科学领域:

  • 光子学 是一个光子学.
  • 量子光学是一种量子光学.
  • 凝聚物质物理学 凝聚物质物理学

背景情况:

  • 将光限制在芯片上的光子腔中对于光学和量子科学至关重要.
  • 拓谷光子学通过拓保护提供了强大的光操纵.

研究的目的:

  • 呈现一个拓边缘状态腔,以增强光束限制和强大的芯片内光导.
  • 提高光子空洞的质量因子和自由光谱范围.

主要方法:

  • 设计和制造一个拓边缘状态腔.
  • 利用拓谷边缘状态来限制光线和循环.
  • 量身定制辐射泄漏率和群体指数以优化腔体性能.

主要成果:

  • 使用拓边缘状态在拓带隙内实现光的限制.
  • 在内在质量因子上表现出三级的提升.
  • 增加了从5.1GHz到7.1GHz的自由光谱范围.

结论:

  • 开发的拓边缘状态腔提供了一个新的,强大的平台,用于芯片上的光束限制.
  • 这个平台可以在质量因素和自由光谱范围方面显著改进.
  • 潜在的应用包括高容量通信,非线性光学,原子钟和量子光子学.