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在现场基于时间的传感器用于使用放大后端电阻和电容的过程识别
Jen-Chieh Hsueh1, Mike Kines1, Yousri Ahmed Tantawy1
1Electroscience Laboratory, Ohio State University, Columbus, OH 43212, USA.
Sensors (Basel, Switzerland)
|September 19, 2025
概括
本研究引入了一个基于时间的现场传感器用于过程认证,使用芯片互连来测量RC时间常数. 一种新的三配置方法放大了小时间常量,减少了82%以上的测量误差.
科学领域:
- 电气工程 电气工程
- 半导体设备物理 半导体设备物理
- 集成电路设计 集成电路设计
背景情况:
- 由于值较小,直接测量芯片上相互连接的RC时间常量具有挑战性.
- 过程验证需要精确测量集成电路特征.
研究的目的:
- 开发一个基于时间的现场传感器,用于准确的过程认证.
- 为了克服在芯片互连中直接测量小RC时间常数的局限性.
主要方法:
- 使用辅助多电阻和MIM电容器的"三配置"测量方法.
- 利用芯片内固有的金属路由来进行RC时常量测量.
- 开发一个简单的分析模型,包括寄生能力.
主要成果:
- 与直接测量相比,测量误差减少了82%以上,只有25%的面积处罚.
- 分析模型与模拟显示出优异的竞争力 (最大2.6%的差异).
- 与模拟相比,在130nm CMOS中制造的传感器变体显示了6.1%的最大误差.
结论:
- 拟议的基于时间的传感器有效地验证了半导体制造过程.
- 三种配置方法显著提高了测量小RC时间常数的准确性.
- 开发的分析模型准确地预测传感器性能.
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