基于高电子移动性晶体管的单体集成THz探测器
Adam Rämer1, Edoardo Negri2,3, Eugen Dischke1
1Ferdinand-Braun-Institut (FBH), 12489 Berlin, Germany.
Sensors (Basel, Switzerland)
|September 19, 2025
概括
我们使用AlGaN/GaN高电子流动性晶体管 (HEMT) 开发了先进的太赫兹 (THz) 直接探测器. 这些探测器具有高灵敏度和低噪声,使得新的太赫兹焦平面阵列 (FPA) 成为可能.
科学领域:
- 特拉赫兹 (THz) 技术的使用.
- 半导体设备物理学 半导体设备物理
- 光电学是指光电子产品.
背景情况:
- 太赫兹直接探测器对于各种成像和传感应用至关重要.
- 现有的探测器往往在灵敏度,噪声性能或可扩展性方面面临限制.
- AlGaN/GaN高电子移动性晶体管 (HEMT) 为高频应用提供有前途的材料性能.
研究的目的:
- 介绍基于AlGaN/GaN HEMTs的新型THz直接探测器.
- 为了证明在室温下最先进的性能.
- 为了展示这些探测器对太赫兹焦平面阵列 (FPA) 的可扩展性.
主要方法:
- 采用多种天线设计的AlGaN/GaN HEMT的单体集成.
- 制造单像素THz探测器和一个二维THz FPA.
- 在广泛的频率范围 (0.11.5 THz) 中,探测器性能的理论和实验性表征.
主要成果:
- 实现了卓越的光学灵敏度 (>20 mA/W至1 THz) 和低噪声等效功率 (NEP<100 pW/Hz).
- 对于单个探测器来说,在175 GHz时显示了低于10 pW/Hz的创纪录的光学NEP.
- 成功实现并描述了一个从0.11.1 THz开始运行的功能THz FPA.
结论:
- 基于AlGaN/GaN HEMT的THz探测器提供卓越的性能,包括在室温下高灵敏度和低NEP.
- 探测器架构易于扩展,用于实际的太赫兹焦平面阵列应用.
- 这些发现代表了THz检测技术的重大进步,用于未来的科学和商业用途.
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