相关实验视频

Updated: Jan 17, 2026

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
09:33

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

6.6K

强合和超快速切换在混合的epsilon-近零-plasmonic metasurfaces中的强合和超快速切换

Chenxingyu Huang, Bin Xu, Siwei Peng

    Applied optics
    |September 22, 2025
    PubMed
    概括

    这项研究引入了一种新的epsilon-near-zero (ENZ) 等离子金属表面,用于超快的全光学切换. 设计的混合材料显示了为先进的光子电路显著增强的非线性光学性能.

    更多相关视频

    Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters10:54

    Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

    Published on: July 8, 2013

    15.3K
    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms08:48

    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

    Published on: September 25, 2020

    6.2K

    相关概念视频

    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    555