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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Local Field Fluorescence Microscopy: Imaging Cellular Signals in Intact Hearts
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完全透明的GaN/InGaN LED作为位置敏感探测器

Christine K McGinn, Keith Behrman, Emily Bittle

    Optics express
    |September 23, 2025
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    概括

    研究人员使用化LED开发了一种透明的位置敏感探测器 (PSD). 该设备准确地定位二维激光束,这对于光学技术和激光对齐至关重要.

    科学领域:

    • 光电学是指光电子产品.
    • 半导体设备 半导体设备
    • 光子学是指光子学的使用方法.

    背景情况:

    • 商业光学技术需要精确的现场光束定位来实现激光对齐.
    • 对于某些应用,现有的方法可能缺乏准确性,透明度或现场能力.

    研究的目的:

    • 开发一个完全透明的二维位置敏感探测器 (PSD).
    • 为了利用化 (GaN) 发光二极管 (LED) 与化 (InGaN) 量子孔用于PSD制造.
    • 为了描述制造的PSD设备的性能,用于激光束检测.

    主要方法:

    • 使用GaNLED制造透明PSD的两个不同的架构.
    • 制造设备的特性,以评估其位置感应能力.
    • 用405nm激光光进行测试,以评估检测的准确性和线性.

    主要成果:

    • 在PSD区域内成功并可重复地在两个维度中定位405nm激光.
    • 实现了低至8.4微米 (μm) 的检测极限.
    • 在位置检测中显示了大约3%的线性.

    结论:

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  • 带有InGaN量子井的化LED可以有效地创建透明的PSD.
  • 开发的PSD为光学应用提供了准确的,现场激光束定位.
  • 该设备显示了在各种商业技术中增强激光对齐的前景.