相关实验视频

Updated: Jan 17, 2026

Local Field Fluorescence Microscopy: Imaging Cellular Signals in Intact Hearts

Local Field Fluorescence Microscopy: Imaging Cellular Signals in Intact Hearts

Published on: March 8, 2017

完全透明的GaN/InGaN LED作为位置敏感探测器

Christine K McGinn, Keith Behrman, Emily Bittle

|September 23, 2025

概括

研究人员使用化LED开发了一种透明的位置敏感探测器 (PSD). 该设备准确地定位二维激光束,这对于光学技术和激光对齐至关重要.

科学领域:

光电学是指光电子产品.
半导体设备半导体设备
光子学是指光子学的使用方法.

背景情况:

商业光学技术需要精确的现场光束定位来实现激光对齐.
对于某些应用,现有的方法可能缺乏准确性,透明度或现场能力.

研究的目的:

开发一个完全透明的二维位置敏感探测器 (PSD).
为了利用化 (GaN) 发光二极管 (LED) 与化 (InGaN) 量子孔用于PSD制造.
为了描述制造的PSD设备的性能,用于激光束检测.

主要方法:

使用GaNLED制造透明PSD的两个不同的架构.
制造设备的特性,以评估其位置感应能力.
用405nm激光光进行测试,以评估检测的准确性和线性.

主要成果:

在PSD区域内成功并可重复地在两个维度中定位405nm激光.
实现了低至8.4微米 (μm) 的检测极限.
在位置检测中显示了大约3%的线性.

结论:

带有InGaN量子井的化LED可以有效地创建透明的PSD.
开发的PSD为光学应用提供了准确的,现场激光束定位.
该设备显示了在各种商业技术中增强激光对齐的前景.

更多相关视频

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

相关概念视频

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...