相关实验视频
Updated: Jul 14, 2026

08:45
Micro-masonry for 3D Additive Micromanufacturing
Published on: August 1, 2014
10.8K
概括
本研究引入了一种新方法来简化半导体制造中的面罩复杂性,通过使用具有次分辨率辅助特性 (SRAF) 的合成布局和面罩规则检查 (MRC) 合规性的基于骨架方法.
科学领域:
- 半导体制造业 半导体制造业
- 石版技术 石版技术 石版技术
- 计算设计的计算设计.
背景情况:
- 面具复杂性是先进半导体制造的关键挑战,特别是在反光刻法技术 (ILT) 引入曲线特征时.
- 现有的掩码规则检查 (MRC) 算法与这些曲线设计作斗争,导致不准确的违规检测.
研究的目的:
- 开发一种新的方法来减少面罩的复杂性,并确保半导体制造中的MRC合规性.
- 解决传统MRC算法的局限性,当应用到ILT生成的曲线布局时.
主要方法:
- 综合布局与区域恒定宽度分分辨率辅助功能 (SRAFs) 进行简化MRC实施.
- 一个基于骨架的距离地图方法,用于自由形式特征的代MRC清洁布局生成.
主要成果:
- 拟议的方法有效地解决了MRC违规行为.
- 观察到对模式错误 (PE) 忠实性的影响微不足道.
- 总体面具复杂性得到了显著的减少.
结论:
- 开发的方法为管理高级半导体节点中的面具复杂性提供了有效的解决方案.
- 它使基于ILT的设计能够直接实现和纠正MRC.
- 这种方法平衡了成像性能与减少制造挑战.
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