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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

555
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
555
MOSFET Amplifiers01:17

MOSFET Amplifiers

494
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
494
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.1K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.1K

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相关实验视频

Updated: Jan 17, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

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Published on: April 24, 2014

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使用金属表面格子实现的高效增益合分布式反半导体激光.

Shuohong Jia, Zeqiu Liu, Suo Wang

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    PubMed
    概括
    此摘要是机器生成的。

    研究人员使用金属表面格子开发了一种新的增益合分布式反激光. 这种优化的设计实现了100mW的单模式输出,为激光制造提供了实用,低成本的解决方案.

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    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
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    科学领域:

    • 光电学是指光电子产品.
    • 半导体激光器半导体激光器

    背景情况:

    • 分布反 (DFB) 激光器对于光通信至关重要.
    • 传统的DFB激光器在制造复杂性和性能优化方面经常面临挑战.

    研究的目的:

    • 为了演示使用金属表面格子的纯增益合激光.
    • 为了优化格子参数以提高性能.
    • 开发一种简化且具有成本效益的制造方法.

    主要方法:

    • 定期注射使用金属表面格子.
    • 将网格覆盖宽度优化为20微米,以改善增强对比度和合系数.
    • 在格子制造中使用起重方法,以防止短路.

    主要成果:

    • 在200 mA的注入电流下实现了100 mW的单模连续波 (CW) 输出.
    • 激光发射的波长以1.09微米为中心,斜率效率为0.58W/A.
    • 显示侧模式抑制比超过42dB和稳定的单模式运行.
    • 在30°C的温度变化范围内显示了超过12.2nm的光谱调范围.

    结论:

    • 开发的金属表面格方法为制造增益合DFB激光器提供了一种实用且低成本的方法.
    • 优化的设计提供可靠的性能,包括高输出功率和稳定的单模式运行.
    • 通过提升技术简化制造提高了制造可行性.