Ge/GeSn p-n-i-p用于短波红外应用的异质连接光电晶体管
Optics express
|September 23, 2025
概括
这项研究制造了用于短波红外 (SWIR) 应用的-锡 (GeSn) heterojunction 双极光电晶体管 (HPT). 增加的锡度显著提高了光学响应能力,达到创纪录的4.77 A/W.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 半导体物理 半导体物理
背景情况:
- -锡 (GeSn) 异质连接双极光电晶体管 (HPT) 对于短波红外 (SWIR) 应用至关重要.
- 现有的GeSn HPT在增长方面面临挑战,并且在SWIR频段中表现出低的实验响应性.
- 优化Sn含量是提高光学和电气特性的关键.
研究的目的:
- 在基板上制造和描述双终端p-n-i-p GeSn HPT.
- 为了研究不同度的Sn (0-6.5%) 对设备性能的影响.
- 为了应对GeSn HPT增长的挑战,并提高SWIR检测的响应性.
主要方法:
- 在Si基板上使用分子束表在Ge虚拟基板上制造GeSn HPT.
- 四个样本的增长,具有不同的Sn度,用于比较分析.
- 电气特征 (暗电流,故障电压) 和电光特征 (响应谱,对照明的响应).
主要成果:
- 观察到暗电流密度降低和故障电压超过6V.
- 高采集器电流和增加的光学响应度,在1310nm上升的入射光学功率.
- 使用6.5%Sn的GeSnHPT在1310nm时实现了4.77A/W的光学响应率,在切断波长中出现了红移.
结论:
- 由于吸收增加,i-GeSn活性层中的Sn度直接改善了光学响应.
- 制造的GeSn HPT显示出出色的电光性能和SWIR应用的基准结果.
- 这些设备在SWIR频段中显示了通信和传感的巨大潜力.
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