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基于4H-SiC激光切片的多焦点方法来抑制隙损失

Jiabao Du, Xiaoyu Lu, Lu Jiang

|September 23, 2025

概括

这项研究引入了一种新的多焦点皮秒激光切片方法,用于碳化 (SiC) 晶圆. 这种技术显著减少了沟损失和表面粗度,提高了效率,并使工业应用成为可能.

科学领域:

材料科学材料科学材料科学
激光物理激光物理
半导体制造业半导体制造业

背景情况:

图秒激光处理对于碳化 (SiC) 晶圆切片至关重要.
在传统方法中,高峰功率会导致显著的沟损失和表面粗.

研究的目的:

开发一种新的多焦激光切片方法,以高效切割4H-SiC晶片.
为了克服单焦皮秒激光处理的局限性.

主要方法:

使用无偏差的非代全息图生成方法进行多焦切片.
研究焦点和焦点差距对内部修改的影响.
描述了接口形态,表面粗度,元素分布和拉曼光谱.

主要成果:

在多焦点分布中实现高均性,减少纵向损伤.
在4焦条件和20微米的焦点间隔下,切片的最佳性能.
晶圆分离强度从24.8 MPa (单焦) 降低到7.6 MPa (4焦).
实现了总表面高度变化为10.7微米.

结论:

多焦激光切片方法提高了效率,并减少了SiC晶圆切片中的缺陷.
通过切割一个6英寸的4H-SiC金,证明了工业应用.
该方法在激光微制造,3D打印和波导制造方面具有潜在的应用.

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