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Updated: Jan 17, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Published on: May 13, 2020

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低压驱动的高速和低能量的记忆操作由新的TiTe2/Sc0.3Sb2Te3相变异构造

Mingjian Zhong1, Yonghui Zheng2, Yongyong Che1

  • 1College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518071, China.

Small (Weinheim an der Bergstrasse, Germany)
|September 25, 2025
PubMed
概括

这项研究引入了一种新的TiTe2/Sc0.3Sb2Te3异构结构用于相位变换内存 (PCM),显著提高了设置速度并减少了重置能量. 这一突破解决了先进半导体芯片开发中的关键性能限制.

关键词:
2D 阶段过渡 2D 阶段过渡TiTe2 / Sc0.3Sb2Te3 异构结构的异构结构高设定速度的高速设置速度.低运行电压的低运行电压低重置能量低重置能量

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