在HfxZr1-xO2薄膜中偏振切换的场诱导结构动力学
Sangjun Lee1, Sunghyun Kim1, Seong Yong Park1
1Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Ltd, Suwon, 16678, Republic of Korea.
Advanced materials (Deerfield Beach, Fla.)
|September 25, 2025
概括
对于铁电 (FE) 和反铁电 (AFE) 装置来说,了解氧化物 (HZO) 中极化切换过程中的晶体结构演变是关键. 这项研究揭示了HZO薄膜中的可逆相变,这对于优化设备性能至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 晶体学 晶体学是指结晶学.
背景情况:
- 在铁电 (FE) 和反铁电 (AFE) 装置中,氧化 (HZO) 的功能取决于其极化特性.
- 了解在HZO中偏振切换期间的结构演变对于设备优化至关重要,但仍然不太了解.
研究的目的:
- 阐明在极化切换过程中HZO薄膜的切换机制和相位演变.
- 为了提供不同HZO组合的相变的明确证据.
主要方法:
- 结合在现场微光束放牧发生率X射线衍射 (GIXRD).
- 基于第一原则的元动力学模拟.
主要成果:
- 切换涉及HZO (x=0到0.5) 中的非极四边形 (t) P42/nmc和极极正方形 (o) Pca21相之间的可逆过渡.
- 富含Zr的AFE化合物在极化逆转过程中表现出完全的t相过渡.
- 富含Hf的FE化合物表现出短暂的t相形成,使逆向o相域的核化和生长成为可能.
结论:
- 该研究澄清了HZO薄膜中的切换机制,详细介绍了相位演变.
- 这些发现促进了HZO中相位演化的工程,用于开发先进的FE和AFE设备.
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