在韦尔半金属CeAlSiSi中,有现场诱导的Lifshitz过渡的证据
M M Piva1, T Helm2, J C Souza1,3
1Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany.
韦尔半金属CeAlSi显示出独特的拓和磁性特性. 舒布尼科夫-德哈斯振荡揭示了场诱导的利夫希茨过渡,并表明铁磁秩序影响韦尔节点.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子材料是一种量子材料.
背景情况:
- CeAlSi是一种韦尔半金属,在非中心对称四角形空间组I41md中结晶.
- 它表现出低于8K的铁磁秩序,打破了空间倒置和时间倒置对称性.
- 这使得CeAlSi成为探索拓状态和电子相关性的模型系统.
研究的目的:
- 在高磁场下研究CeAlSi的电子特性.
- 了解其拓性质和铁磁排序之间的相互作用.
- 识别拓阶段过渡的签名.
主要方法:
- 在电阻力中测量舒布尼科夫-德哈斯振荡.
- 应用高磁场 (高达68 T) 与[001]晶体轴平行.
主要成果:
- 在电阻力中观察到舒布尼科夫-德哈斯振荡.
- 检测到14 T附近的振荡频率的突然变化,表明场诱导的Lifshitz过渡.
- 结果表明铁磁顺序将韦尔节点更接近费米水平,并突出了RKKY相互作用的作用.
结论:
- CeAlSi是研究相关电子系统中的拓现象的关键平台.
- 观察到的Lifshitz过渡提供了关于磁场下的电子带结构修改的见解.
- 铁磁秩序显著影响CeAlSi的拓性质.
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