在铁磁半导体LaBr2单层中,易磁化轴的应变驱动切换
Jiawen Zhang1, Jiaqi Li1, Yaxin Pan1
1Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
Langmuir : the ACS journal of surfaces and colloids
|September 26, 2025
概括
应变工程有效地控制了LaBr2单层中的磁性异构性. 施加压力应变将轻松磁化的轴移动,为先进的自旋电子设备铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 量子力学就是量子力学.
背景情况:
- 精确控制磁性异构性对于自旋电子技术至关重要.
- 原子尺度的控制受到旋转轨道合,对称性破坏和热波动的阻碍.
研究的目的:
- 通过应变工程来证明有效控制LaBr2单层中的磁性异构性.
- 为了研究应变诱导的磁性异构性转换的潜在机制.
主要方法:
- 使用第一原则计算来研究LaBr2单层.
- 应变工程被应用来修改格子结构并分析其对磁性质的影响.
主要成果:
- 双轴压力应变诱导容易磁化轴从内平面向外平面过渡.
- 应变调节了La原子的轨道合,改变了磁性异质构成的配置.
- 应变工程为调整二维材料中的磁性提供了一个可行的途径.
结论:
- 通过应变工程的晶格变形提供了一种控制二维系统中的磁性异性质的方法.
- 这项研究可以在应变控制的自旋电子装置中进行潜在的应用.
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