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Updated: Jun 24, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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网络密度对分子层沉积的圆电子束/EUV电阻的模式性能的影响

Long Viet Than1, Giulio D'Acunto1, Maggy Harake1

  • 1Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.

ACS applied materials & interfaces
|September 26, 2025
PubMed
概括

研究人员探索了金属有机光电阻的分子网络结构如何影响极紫外线 (EUV) 光刻性能. 氧化中较低的网络密度阻碍了提高灵敏度和分辨率,实现14纳米半音调模式.

关键词:
电子束 lithography 电子束 lithography 电子束 lithography 电子束 lithography 电子束 lithography 电子束极端紫外线的光刻法极端紫外线的光刻法.金属-有机薄膜是一种薄膜.分子层沉积的分子层沉积.摄影电阻的使用方法

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