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Updated: Jan 16, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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粘附层厚度对接触电阻和Schottky屏障特征的影响 WSe2 场效应晶体管

Sung-Ha Kim1,2, Seong-Yeon Lee3, Tae-Jeong Kim1,2

  • 1Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|September 26, 2025
PubMed
概括

更厚的 (Cr) 粘附层显著提高了多层二化 (WSe2) 场效应晶体管 (FET) 的电性能. 增加Cr厚度降低了接触阻力和Schottky屏障高度,提高了载体注入.

关键词:
斯科特基屏障的高度是WSe2 场效应晶体管的效应晶体管.接触电阻 接触电阻 接触电阻图像力降低降低的图像力.转移长度方法转移长度方法

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