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为W频段应用设计一种高功率,高效率的GaN功率放大器

Shuai Liu^1,2, Xiaohua Ma¹, Yi Zhang²

¹School of Microelectronics, Xidian University, Xi'an 710071, China.

|September 27, 2025

概括

本研究介绍了一种用于W频段应用的高效,高输出功率放大器. 它在80-86 GHz范围内实现了最高的功率增加效率 (PAE),超过了以前的设计.

科学领域:

电气工程电气工程
材料科学材料科学材料科学
微波工程微波工程

背景情况:

对于高带宽通信系统来说,W频段 (80-116 GHz) 频率至关重要.
开发高效和高功率的放大器为W频段运行提出了重大挑战.
在碳化物 (SiC) 上的化 (GaN) 高电子移动性晶体管 (HEMT) 技术为高频应用提供了卓越的性能.

研究的目的:

设计和演示具有高效率和输出功率的W频段功率放大器 (PA).
为了优化整个W频段频率范围的PA性能.
与现有的W频段电源相比,实现最先进的功率增加效率 (PAE).

主要方法:

使用130nm的AlGaN/GaN-on-SiC HEMT工艺来制造设备.
采用平衡放大器架构,两个单元通过朗格合器结合在一起.
集成的高和低阻抗微条线路用于阻抗匹配和三级放大器核心用于增强收益.

主要成果:

在 -2.2 V 门电压和 +20 V 排水电压下,实现了超过 17 dB 的小信号增强.
在80-86 GHz频段,输出功率>34dBm,输入功率为22dBm.
实现了功率增益>12dB和功率增加效率 (PAE) >20%,在这个频段中显示出最高的PAE.

结论:

开发的W频段PA表现出极好的输出功率和增益性能.
平衡的架构和优化的匹配网络有助于提高效率.
这项工作为PAE在80-86 GHz频段设定了新的基准,为先进的W频段系统铺平了道路.

关键词:

获得了他的家.在W频段,W频段是W频段.平衡的架构平衡的架构高效率的功率放大器功率放大器.长时间的合器

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