在MnBi2Te4中通过Gate和磁场调节进行重新配置的磁传输
Yuang Jie1, Xiaofan Cai1, Yijie Lin1
1Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Advanced materials (Deerfield Beach, Fla.)
|September 27, 2025
概括
在像MnBi2Te4这样的内在磁拓绝缘体中,平面内磁场调整了量子相. 研究人员观察到一个能够调节门的磁阻交叉器,使得自旋电子设备能够对磁性和电子状态进行电气控制.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子现象是一种量子现象.
背景情况:
- 像MnBi2Te4这样的内在磁拓绝缘体 (MTIs) 提供了独特的量子相.
- 了解磁传输特性对于设备应用至关重要.
- 平面内磁场被提议作为MTIs的调参数.
研究的目的:
- 研究少数层MnBi2Te4.4的磁传输行为.
- 专注于飞机内磁场的影响.
- 探索门电压,温度和场角的依赖性.
主要方法:
- 对少数层的MnBi2Te4.4进行实验研究.
- 测量磁传输作为门电压,温度和磁场角度的函数.
- 对平面内磁场效应的分析.
主要成果:
- 观察到一个门调节的交叉在磁电阻从正向负在内平面领域.
- 证明在平面中的磁场诱导了从反铁磁到在平面中的铁磁顺序的过渡.
- 通过视角依赖的测量揭示了强烈的门调节磁传输异质性.
结论:
- 平面内磁场有效调节MnBi2Te4.4中的自旋和电荷传输.
- 实现了对磁性和电子相位转换的门调节控制.
- 这些发现推动了可重新配置的自旋电子和拓设备的开发.
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