改善4H-SiC JBS二极管温度传感性能和热稳定性的方法
Yu Huang1, Zhanwei Shen2,3, Yujian Chen1
1Department of Physics, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China.
Small (Weinheim an der Bergstrasse, Germany)
|September 27, 2025
概括
新的4H-SiC交叉屏障Schottky (JBS) 二极管为工业温度监测提供了高灵敏度和线性. 这些耐用的传感器在高温老化后保持性能,这对系统安全性和效率至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体设备 半导体设备
- 传感器技术 传感器技术
背景情况:
- 精确的温度监测对于恶劣工业环境中的安全和效率至关重要.
- 开发高灵敏度,耐用的温度传感器,在高温下保持可靠性,是一个重大挑战.
- 基于碳化 (SiC) 的设备由于其材料特性,对高温应用具有前景.
研究的目的:
- 设计和制造用于高温传感应用的4H-SiC连接屏障Schottky (JBS) 二极管.
- 为了在SiC JBS二极管中实现高灵敏度和线性,同时确保热稳定性.
- 为了研究影响长时间高温暴露后SiC JBS二极管性能的降解机制.
主要方法:
- 制造具有不同活性面积的4H-SiC连接屏障Schottky (JBS) 电极.
- 二极管的性能特征,包括在广泛的电流范围内测量灵敏度和线性.
- 高温老化试验 (200-500°C),然后进行老化后性能评估.
- 使用材料表征技术分析降解机制,以研究界面特性.
主要成果:
- 成功制造出具有高灵敏度和线性性的4H-SiC JBS二极管.
- 具有小活性区域的二极管保持了高线性 (R2>0.999) 并在500°C36小时后仅显示6.8%的灵敏度降低.
- 对于小活性区域二极管,达到1.65mV/°C的最大灵敏度,对于大活性区域二极管,达到2.24mV/°C.
- 在500°C老化后,确定了12纳米的界面层和Ti和4H-SiC之间的界面状态密度增加,与性能降低相关.
结论:
- 4H-SiC JBS二极管是高灵敏度,高线性温度传感在苛刻的工业条件下的一个可行的解决方案.
- 开发的二极管在高温老化后表现出极好的热稳定性和可靠性.
- 了解界面降解机制是进一步优化SiC温度传感器性能和寿命的关键.
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