在单层V2O3磁性拓绝缘体中,基板对电子带结构和拓性质的影响
Zheng Wang1, Jingshen Yan1, Shu-Shen Lyu1,2,3
1School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen, 518107, P. R. China. chenkx26@mail.sysu.edu.cn.
Physical chemistry chemical physics : PCCP
|September 29, 2025
概括
对于V2O3单层来实现量子异常霍尔 (QAH) 状态,基质选择是关键. 非磁性基板保留QAH阶段,而铁磁性基板破坏它,影响拓电子.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子现象是一种量子现象.
背景情况:
- 单层V2O3是一种具有铁磁顺序的2D磁拓绝缘体.
- 它表现出一个非碎的带间隙,使其成为量子异常霍尔 (QAH) 状态的候选者.
研究的目的:
- 研究不同基板如何影响V2O3单层的电子和拓性质.
- 了解基板工程在修改V2O3的电子结构和拓相中的作用.
主要方法:
- 第一个原则密度函数理论 (DFT) 计算.
- 范德瓦尔斯 (vdW) 异构结构与各种基板的建模.
主要成果:
- 非磁性基板 (例如,h-BN) 保持QAH阶段 (切尔恩数C=1) 和奇拉边缘状态.
- 铁磁基板由于磁交换场和界面电荷转移,破坏了QAH状态.
- 基板选择对V2O3单层的电子结构和拓相具有关键的影响.
结论:
- 基板工程是实现QAH状态在V2O3基于VDW异构结构中的关键策略.
- 这项研究推进了V2O3的潜力,用于低功耗的拓电子.
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