在In2Se3中通过激光诱导的纹来控制相位过渡
Joseph L Spellberg1,2, Lina Kodaimati2, Atreyie Ghosh1
1James Franck Institute, University of Chicago, Chicago, Illinois 60637, United States.
Nano letters
|September 30, 2025
概括
控制的激光诱导纹使二维化 (In2Se3) 薄膜中的可逆相变成为可能. 这种室温方法为铁器设备架构和相变存储器技术提供了新的途径.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 两维 (2D) 材料通过晶相过渡提供可调节的电子和铁性质.
- 化 (In2Se3) 呈现两种室温稳定相 (α和β') 具有明显的铁性行为,对于记忆应用至关重要.
- 在In2Se3阶段之间可靠和可逆的切换是设备实现的一个重大挑战.
研究的目的:
- 开发一种室温方法,用于2D In2Se3.3.中的可控和可逆相变.
- 研究激光诱导的纹作为操纵In2Se3.3.中的铁态的机制.
- 建立一个生成多相异构的途径,并在In2Se3.3中指导域重组.
主要方法:
- 使用激光诱导的纹来诱导2D In2Se3.3中的β' →α相变.
- 采用热回火来恢复相位并恢复原来的铁态状态.
- 利用在纹过程中产生的积累的内部应变来驱动相位变化和域重组.
主要成果:
- 在2D In2Se3中通过室温激光诱导的纹证明了成功和受控的β' → α相位过渡.
- 通过将激光纹与热结合,建立了可逆相切换机制,消除了对冷步骤的需求.
- 展示了多相异构的生成和通过应变工程指导域重组.
结论:
- 激光诱导的纹提供了一种有效的室温策略,用于操纵2D In2Se3.3.中的铁态.
- 开发的方法为推进铁器设备架构和相变存储器技术提供了一条实用途径.
- 这种方法克服了先前技术的局限性,避免了冷条件和机械干扰.
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