多级纳米阵列旋转轨道扭矩装置用于内存处理应用程序
Daekyu Koh1, Dong-Jun Kim1, Taehwan Kim2
1Department of Materials Science and Engineering, KAIST, Daejeon 34141, Republic of Korea.
Nano letters
|October 1, 2025
概括
研究人员开发了多层纳米阵列旋转轨道扭矩 (SOT) 设备,用于过程内存 (PIM) 应用. 这些SOT设备能够实现超快,节能的模拟和数字内存计算,克服数据传输的局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机架构 计算机架构
背景情况:
- 数据驱动技术面临性能瓶,原因是处理器和内存之间数据传输的高能量和时间成本.
- 过程内存 (PIM) 架构通过在内存单元内执行计算来提供解决方案,减少数据移动开销.
研究的目的:
- 为先进的PIM应用提出和演示新的多层纳米阵列旋转轨道扭矩 (SOT) 装置.
- 展示这些SOT设备在模拟和数字内存计算中的潜力.
主要方法:
- 一个带有多个铁磁岛的Hall bar结构的制造.
- 通过改变岛屿大小或形状来调节SOT开关电流.
- 通过输入电流调制来控制离散的多级状态.
- 使用脉冲电流作为数字输入和多层电阻作为数字输出进行逻辑运算的演示.
主要成果:
- 实现了对离散多级状态的精确控制,证明了模拟PIM功能.
- 成功实施逻辑操作,证实适合数字PIM应用.
- 展示了使用纳秒电流脉冲而没有外部磁场的超快切换速度.
结论:
- 多层纳米阵列SOT设备是超快速和节能PIM的有希望的平台.
- 这些设备有效地解决了当前计算架构中的数据传输瓶.
- 展示的模拟和数字功能为下一代计算系统铺平了道路.
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