在磁道交叉点进行反铁磁切换的Ru/IrMn界面轨道-旋转转换
Yue Bai1, Wenlong Cai1,2, Zanhong Chen1
1Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Nano letters
|October 1, 2025
概括
我们在Ru/IrMn异构结构中使用轨道霍尔效应 (OHE) 演示了有效的轨道到旋转转换. 这使得反铁磁 (AFM) 命令在具有超快速速度和低能耗的旋转器件中能够在无磁场中切换.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 电流诱导的反铁磁 (AFM) 切换对于下一代自旋电子设备至关重要.
- 轨道霍尔效应 (OHE) 为有效的AFM控制提供了一个潜在的途径,但实验证据有限.
研究的目的:
- 在Ru/IrMn异构结构中实验验证和量化OHE诱导的扭矩.
- 为了证明使用OHE的AFM命令的高效,无现场切换.
- 为了研究轨道到旋转转换的潜在机制.
主要方法:
- Ru/IrMn异构结构的制造和表征.
- 测量缓冲式和现场式扭矩效率.
- 研究旋转和轨道扩散动态.
- 在交换偏差磁道连接点 (EB-MTJs) 中展示AFM切换.
主要成果:
- 显著提高了OHE诱导的缓冲式 (0.86 × 105 Ω-1 m-1) 和场式 (3.01 × 105 Ω-1) 扭矩效率.
- 揭示了一个快速高效的交界轨道到旋转转换机制.
- 在EB-MTJ中证明了完全的,无现场的OHE诱导的AFM切换,具有超快的0.2ns写入速度和低能耗.
结论:
- 这项研究确立了轨道霍尔效应作为操纵反铁磁秩序的可行机制.
- 这些发现为开发基于轨道电子的超快,低功耗和可扩展的自旋电子设备铺平了道路.
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