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通过天线合的4 × 1 UTC-PD阵列和T连接组合器进行增强的太赫兹波生成

Hussein Ssali, Yoshiki Kamiura, Yuanhao Li

|October 1, 2025

概括

研究人员使用芯片上的光电子方法提升了太赫兹 (THz) 波动功率. 整合了四个单程载波光二极管 (UTC-PD),在300GHz时,检测功率增加了10.9dB.

科学领域:

光电学是指光电子产品.
特拉赫兹 (THz) 技术的使用.
半导体器件是指半导体器件.

背景情况:

太赫兹 (THz) 频段对于先进的通信和传感至关重要.
电流THz源的有限输出功率阻碍了实际应用.
在芯片上集成THz组件对于小型化和效率至关重要.

研究的目的:

展示一个芯片上的光电子方法来增强THz波动功率.
集成一个微条纹补丁天线和T连接组合器与阵列统一旅行载波光二极管 (UTC-PDs).
为了评估这个集成系统在碳化 (SiC) 基板上的性能.

主要方法:

微条纹补丁天线和4×1T连接组合器的单体集成.
在碳化 (SiC) 基板上使用排列的InGaAs/InP单程载波光二极管 (UTC-PDs).
通过结合多个UTC-PDs的光电流来测量THz功率增强.

主要成果:

与单个UTC-PD相比,在300GHz时检测到的THz功率增加了10.9dB.
实验结果与对电流驱动源的理论预测非常相匹配.
证明了光电流组合用于功率增强的可扩展性.

结论:

开发的芯片上的光电子方法有效地提高了THz波功率.
碳化 (SiC) 基板显示出作为高功率THz系统的强大平台的潜力.
这种集成策略为更强大,更紧的THz通信和传感设备铺平了道路.

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