相关实验视频

Updated: Jan 16, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

9.2K

通过增强孔注入和抑制电子泄漏,构建低效率的基于InP的滚动式QLED

Jiaming Li, Qiuyan Li, Hui Wang

    Optics letters
    |October 1, 2025
    PubMed
    概括

    离子液体合PEDOT:PSS和PVK层减少红色化物 (InP) 量子点发光二极管 (QLED) 的效率滚动. 这种结构工程提高了高亮度应用的电荷平衡和外部量子效率 (EQE).

    更多相关视频

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    15.4K
    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    10.2K

    相关概念视频

    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
    1.8K
    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    555
    Carrier Generation and Recombination01:22

    Carrier Generation and Recombination

    Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
    This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
    Indirect generation involves an...
    1.2K