Zi-Jun Guo1, Geng-Bo Wu2

  • 1State Key Laboratory of Terahertz and Millimeter Waves, Department of Electrical Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong SAR, China.

PubMed
概括

研究人员开发了一种新的太赫兹振幅调制器,使用基于石墨烯的可调节电容器. 这种固态设备实现了40多个dB的调制在2THz,30MHz的速度,用于先进的太赫兹应用.

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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Design Example: Capacitance Multiplier Circuit01:20

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Equivalent Capacitance01:19

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