SnCdS

Ye Tian1, Bo Cao1, Qilin Wei2

  • 1State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies, School of Semiconductors and Physics, North University of China, Taiyuan 030051, China.

概括

量子限制在Sn-doped CdS微中显著提高了磁光极化控制的近100%. 磁光学领域的这一突破为物质属性操纵开辟了新的途径.