在高k介电双门晶体管中通过低频噪声光谱解离子切换动态
Soi Jeong1, Chang-Hyeon Han2, Been Kwak2
1Department of AI Semiconductor Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Nano convergence
|October 3, 2025
概括
这项研究使用了一种新的TiO2介层来控制HfO2介电材料中的氧气空缺,用于先进的记忆器件. 低频噪声分析揭示了这些缺陷如何影响设备性能和操作.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 设备物理 设备物理
背景情况:
- 像氧化 (HfO2) 这样的高k介电材料对于先进的电子产品至关重要.
- 介电材料中的氧气空缺可以被设计为内存功能.
- 分析氧气空缺对设备特征的影响是复杂的.
研究的目的:
- 调查调制氧空位度对基于HfO2的设备的影响.
- 分析双门薄膜晶体管 (TFT) 与TiO2中间层中的不对称性.
- 了解使用低频噪声 (LFN) 描述的缺陷介导记忆操作.
主要方法:
- 使用HfO2作为门介电体制造双门TFT.
- 引入一个TiO2中间层来调节氧气空隙度.
- 使用低频噪声 (LFN) 特性进行系统分析.
主要成果:
- TiO2中间层有效地增加了底门介电体中氧气空缺含量.
- 基于氧气空位迁移的内存操作主要通过底部门进行.
- LFN的表征揭示了氧空位调节对设备行为和机制的明显影响.
结论:
- 使用TiO2介层的介电工程为内存应用程序提供了一种控制氧气空缺的方法.
- LFN分析提供了对氧化物基记忆器件缺陷动态的关键见解.
- 优化介电性质是下一代电子设备的关键.
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