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Updated: Jan 16, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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嵌入分子开关的有机Schottky屏障晶体管用于高开关比率

Hye Ryun Sim1, Syed Zahid Hassan1, Sangjun Lee1

  • 1Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea. dchung@postech.ac.kr.

Materials horizons
|October 4, 2025
PubMed
概括

研究人员使用二甲基乙烯 (DAE) 和有机肖特基屏障晶体管 (OSBT) 开发了新的有机晶体管. 这种可光编程晶体管实现了创纪录的切换比率,超过了传统的有机场效应晶体管 (OFET).

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