基于单层α-In2X3 (X = S, Se, Te) 的5nm门长场效应晶体管
Yun-Ya Zhong1, Jian-Qing Dai1, Jin Yuan1
1Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China. djqkust@kust.edu.cn.
Physical chemistry chemical physics : PCCP
|October 4, 2025
概括
二维 (2D) α-In2X3 铁电半导体对未来的场效应晶体管 (FET) 显示出有前途的前景. 模拟显示了它们的高性能潜力,满足未来的半导体标准,具有底层覆盖配置.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体设备物理 半导体设备物理
背景情况:
- 二维 (2D) α-In2X3 (X = S,Se,Te) 材料是新兴的铁电半导体.
- 它们在场效应晶体管 (FET) 应用中的潜力需要进一步研究.
研究的目的:
- 为了量化单层 (ML) α-In2X3双门 (DG) 金属氧化物半导体场效应晶体管 (MOSFET) 的性能极限,其门长度为5nm.
- 为了比较非底层 (非UL) 和对称底层 (UL) 配置的性能.
主要方法:
- 使用了第一原理量子运输模拟.
- 分析了包括现状电流 (Ion) 和下值波动 (SS) 在内的性能指标.
主要成果:
- 对于非UL设备,α-In2S3 MOSFET显示出最高的离子和最低的SS.
- α-In2Se3 MOSFETs显示低SS,而α-In2Te3 MOSFETs实现了高离子.
- 底层配置使所有ML α-In2X3 DG MOSFET能够满足2028年ITRS标准的高性能和低功耗,实现理想的SS.
结论:
- 单层α-In2X3材料是未来MOSFET通道应用的可行的候选材料.
- 底层工程显著提高了这些二维铁电MOSFET的性能.
- 选择X (S,Se,Te) 影响设备性能,因为有效质量和带隙变化.
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