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Updated: Jan 16, 2026

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对二维半导体缺陷的磁性近距离合

Muhammad Hassan Shaikh1, Matthew P Whalen2, Dai Q Ho3,4

  • 1Department of Physics, University of Delaware, Newark, Delaware 19716, United States.

ACS nano
|October 4, 2025
PubMed
概括

研究人员在二维 (2D) 抗铁磁 (AFM) 硫酸 (CrPS4) 中检测到Néel向量,使用化 (WSe2) 的局部缺陷. 这种光学方法使得AFM磁态的特征能够用于先进的计算.

关键词:
CrPS4CrPS4CrPS4CrPS4CrPS4CrPS4CrPS4CrPS4CrPS4CrPS4CrPS4Cr这就是WSe2Se2.半导体中的缺陷.磁性近距离效应的影响旋转极化的电荷转移转移是自旋极化的.这是一种二维磁铁.类型II频段对齐器

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