ab initio

Rongjing Guo1, Kwangrae Kim1, Zhongcan Xiao1

  • 1The University of Texas at Austin, Texas Material Institute and Department of Mechanical Engineering, Austin, Texas 78712, USA.

Physical review letters
|October 5, 2025
PubMed
概括

我们开发了一种新方法,通过带电缺陷准确计算电子散射. 这揭示了充电缺陷强烈影响2D材料中的电子流动性,与此前的观点相反.